| PART |
Description |
Maker |
| SGM2016AM SGM2016AP SGM2016AM/AP |
GaAs N-channel Dual-Gate MES FET
GaAs N-channel Dual-Gate MES FET
|
SONY[Sony Corporation]
|
| SGM2016M/P |
GaAs N-channel Dual-Gate MES FET
|
SONY
|
| 3SK309 |
Silicon N Channel MOS FET
GaAs N Channel Dual Gate MES FET UHF RF Amplifier
|
Hitachi Semiconductor
|
| MGF0906 MGF0906B |
L /S BAND POWER GaAs FET
MITSUBISHI SEMICONDUCTOR (GaAs FET) L, S BAND POWER GaAs FET
|
Mitsubishi Electric Corporation
|
| BF1206 |
Dual N-channel dual-gate MOS-FET
|
Philips Semiconductors
|
| NE25139 NE25137 |
GENERAL PURPOSE DUAL GATE GAAS MESFET
|
NEC[NEC]
|
| NE25139U74 NE25139U73 NE25139U71 NE25139-T1 NE2513 |
GENERAL PURPOSE DUAL-GATE GaAS MESFET
|
California Eastern Labs
NEC[NEC]
Duracell
NEC Corp.
|
| NE25337 NE25339 |
GENERAL PURPOSE DUAL-GATE GaAs MESFET
|
NEC[NEC]
|
| NE25118-T1 NE25118 |
GENERAL PURPOSE DUAL-GATE GaAS MESFET
|
Duracell
NEC Corp.
NEC[NEC]
California Eastern Labs
|
| MGF0905A MGF0905 0905A |
MINIATURE POWER RELAY
L /S BAND POWER GaAs FET
L,S BAND POWER GaAs FET
LS BAND POWER GaAs FET
From old datasheet system
|
Mitsubishi Electric Corporation
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| BF1100WR |
Dual-gate MOS-FET
|
NXP Semiconductors
PHILIPS[Philips Semiconductors]
|
